Components and spare parts for ion implantation

Ion implantation is an important process during the manufacture of semiconductors. Implanters dope wafers with "foreign atoms" in order to modify material properties such as conductivity or crystal structure. The heart of an implanter system is the beam path. Here, the ions are generated, concentrated, accelerated dramatically and guided at high speed to the wafer.

Ion implantation is the injection of the ion beam with an energy order of 100keV into a material where the ion beam will have a series of physical and chemical interactions with atoms or molecules in the material. The incident ions gradually lose their energy, and finally stop in the material and cause a change in composition, structure and properties of the surface of the material, thus optimizing the surface properties of the material, or giving some new excellent performance to the material.

Temperatures of up to 1 400 C, strong electromagnetic fields, aggressive process gases and powerful mechanical forces cause problems for conventional materials. But not for our products. Our heat-resistant components made from molybdenum, tungsten, graphite or ceramics excel due their ideal combination of corrosion resistance, material strength, high thermal conductivity and absolute purity.

We know how important reproducible quality is for your process. Which is why we make sure that our quality is exceptional. Every single time. How do we do it? We have been manufacturing high-performance materials and handle every stage of the production process ourselves – from the metal powder through to the finished product. Only implanter components that pass our rigorous quality controls are allowed to leave our factory.

· Chambers (tungsten, molybdenum and alloys)

· Filaments (tungsten and tungsten alloys)

· Arc slits (tungsten, molybdenum and alloys)

· Holders (tungsten, molybdenum and alloys)

· Cathodes (tungsten, molybdenum and alloys)

· Spare parts (tungsten, molybdenum and alloys)